دیتاشیت PZT651T1G
مشخصات دیتاشیت
| نام دیتاشیت |
PZT651T1
|
| حجم فایل |
60.344
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi PZT651T1G
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
2A
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Power Dissipation (Pd):
800mW
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Transition Frequency (fT):
75MHz
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DC Current Gain (hFE@Ic,Vce):
75@1A,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
60V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@2A,200mA
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Package:
SOT-223
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
2A
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Voltage - Collector Emitter Breakdown (Max):
60V
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Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 2A
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
75 @ 1A, 2V
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Power - Max:
800mW
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Frequency - Transition:
75MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-261-4, TO-261AA
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Supplier Device Package:
SOT-223
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Base Part Number:
PZT651
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detail:
Bipolar (BJT) Transistor NPN 60V 2A 75MHz 800mW Surface Mount SOT-223
